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TuG1 - III-V Photonic Materials Session Presider: John Bowers
8:30-10:00 Kahiki/Lily
TuG1.1 -
Mid-infrared quantum well lasers on multi-functional metamorphic buffers
08:30-08:45
2017-10-03 08:30 2017-10-03 08:45 America/Denver Mid-infrared quantum well lasers on multi-functional metamorphic buffers In this talk, we demonstrate the concept of a multi-functional metamorphic buffer (MFMB) layer that not only allows for growth of highly lattice-mismatched active regions on InP substrates, but also serves as a bottom cladding layer for optical confinement in a laser waveguide. Hilton Santa Fe Historic Plaza Kahiki/Lily

    M. Lee , UIUC, Urbana, IL, United States, D. Jung , UCSB, Santa Barbara, CA, United States D. Wasserman , UT Austin, Austin, TX, United States L. Yu , IBM, Albany, NY, United States

    In this talk, we demonstrate the concept of a multi-functional metamorphic buffer (MFMB) layer that not only allows for growth of highly lattice-mismatched active regions on InP substrates, but also serves as a bottom cladding layer for optical confinement in a laser waveguide.
TuG1.2 -
Bright single InAs quantum dots at telecom wavelengths in site-selective InP nanowires
08:45-09:00
2017-10-03 08:45 2017-10-03 09:00 America/Denver Bright single InAs quantum dots at telecom wavelengths in site-selective InP nanowires We demonstrate bright single InAs QDs in InP nanowires that emits in the telecom O-band. We control the arsenic composition of the QDs in the range of 20-75%. To maintain high spontaneous emission rate at longer wavelength, nanowires of cladding diameter of 340nm were synthesized. Hilton Santa Fe Historic Plaza Kahiki/Lily

    S. Haffouz , National Research Council Cana, Ottawa, OR, Canada, D. Dalacu , National Research Council Cana, Ottawa, ON, Canada P. Poole , National Research Council Cana, Ottawa, ON, Canada K. Mnaymneh , National Research Council Cana, Ottawa, ON, Canada J. Lapointe , National Research Council Can, Ottawa, ON, Canada G. Aers , National Research Council Can, Ottawa, ON, Canada D. Poitras , National Research Council Can, Ottawa, ON, Canada R. Williams , National Research Council Can, Ottawa, ON, Canada

    We demonstrate bright single InAs QDs in InP nanowires that emits in the telecom O-band. We control the arsenic composition of the QDs in the range of 20-75%. To maintain high spontaneous emission rate at longer wavelength, nanowires of cladding diameter of 340nm were synthesized.
TuG1.3 -
Growth and Characterization of III/V Nano Ridge Laser on Si Substrate Invited
09:00-09:30
2017-10-03 09:00 2017-10-03 09:30 America/Denver Growth and Characterization of III/V Nano Ridge Laser on Si Substrate The selective area growth of III/V nano ridge laser on trench-patterned 300 mm (001) Si substrate is a new laser integration approach to realize an optical gain medium with low defect density and being compatible to the CMOS process at the same time. Hilton Santa Fe Historic Plaza Kahiki/Lily

    B. Kunert , Imec, Leuven, BC, Belgium, Y. Mols , Imec, Leuven, Belgium Y. Shi , Ghent University, Ghent, CA, Belgium D. Van Thourhout , Ghent University, Ghent, Belgium M. Pantouvaki , Imec, Leuven, Belgium J. Van Campenhout , Imec, Leuven, Belgium R. Langer , Imec, Leuven, Belgium

    The selective area growth of III/V nano ridge laser on trench-patterned 300 mm (001) Si substrate is a new laser integration approach to realize an optical gain medium with low defect density and being compatible to the CMOS process at the same time.
TuG1.4 -
Lattice-matched AlInN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Applications
09:30-09:45
2017-10-03 09:30 2017-10-03 09:45 America/Denver Lattice-matched AlInN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Applications A lattice-matched AlInGaN digital alloy structure is studied based on the lattice-matched AlInN/GaN ultra-short period superlattices. The numerical findings suggest the potential capabilities of such AlInN/GaN digital alloy in mid- and deep-ultraviolet applications attributed to its tunable bandgap and broadband optical transitions. Hilton Santa Fe Historic Plaza Kahiki/Lily

    W. Sun , Lehigh University, Bethlehem, PA, United States, C. Tan , Clarkson University, Potsdam, NY, United States N. Tansu , Lehigh University, Bethlehem , PA, United States

    A lattice-matched AlInGaN digital alloy structure is studied based on the lattice-matched AlInN/GaN ultra-short period superlattices. The numerical findings suggest the potential capabilities of such AlInN/GaN digital alloy in mid- and deep-ultraviolet applications attributed to its tunable bandgap and broadband optical transitions.
TuG1.5 -
Investigation of Refractive Index in Dilute-P GaNP Alloys by First-Principle
09:45-10:00
2017-10-03 09:45 2017-10-03 10:00 America/Denver Investigation of Refractive Index in Dilute-P GaNP Alloys by First-Principle First-principle analysis on the refractive index of dilute-P GaN1-xPx alloys have been carried out, and the findings indicate significant refractive index modulation with a minute amount of phosphorus in the GaN material in visible regime. Hilton Santa Fe Historic Plaza Kahiki/Lily

    D. Borovac , Lehigh University, Bethlehem, PA, United States, C. Tan , Clarkson University, Potsdam, NY, United States N. Tansu , Lehigh University, Bethlehem, PA, United States

    First-principle analysis on the refractive index of dilute-P GaN1-xPx alloys have been carried out, and the findings indicate significant refractive index modulation with a minute amount of phosphorus in the GaN material in visible regime.