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TuG2 - Photonic Integration on Silicon Session Presider: Minjoo Lawrence Lee
10:30-12:15 Kahiki/Lily
TuG2.1 -
Antimony based Mid-Infrared Semiconductor Materials and Devices Monolithically Grown on Silicon Substrates
10:30-10:45
2017-10-03 10:30 2017-10-03 10:45 America/Denver Antimony based Mid-Infrared Semiconductor Materials and Devices Monolithically Grown on Silicon Substrates Integration of GaSb onto Silicon would lead to a dramatic reduction in cost of mid-infrared optoelectronic devices and open up new applications in lab-on-chip technologies. Here, we report on novel techniques to grow high quality GaSb materials and devices onto Silicon using molecular beam epitaxy. Hilton Santa Fe Historic Plaza Kahiki/Lily

    P. Carrington , Lancaster University, Lancaster, United Kingdom, E. Delli , Lancaster University, Lancaster, United Kingdom P. Hodgson , Lancaster University, Lancaster, United Kingdom E. Repiso , Lancaster University, Lancaster, United Kingdom A. Craig , Lancaster University, Lancaster, United Kingdom A. Marshall , Lancaster University, Lancaster, United Kingdom A. Krier , Lancaster University, Lancaster, United Kingdom

    Integration of GaSb onto Silicon would lead to a dramatic reduction in cost of mid-infrared optoelectronic devices and open up new applications in lab-on-chip technologies. Here, we report on novel techniques to grow high quality GaSb materials and devices onto Silicon using molecular beam epitaxy.
TuG2.2 -
A Comparison of Bonding and Growth for Heterogeneous Photonic Integrated Circuits Invited
10:45-11:15
2017-10-03 10:45 2017-10-03 11:15 America/Denver A Comparison of Bonding and Growth for Heterogeneous Photonic Integrated Circuits Direct bonding has been used to demonstrate a variety of III-V on silicon devices, including a 2.54 Tbit/s network on chip. A related approach is to epitaxially grow III-V quantum dot lasers on silicon, which has demonstrated submilliamp laser thresholds and improvement in laser lifetimes. Hilton Santa Fe Historic Plaza Kahiki/Lily

    J. Bowers , UCSB

    Direct bonding has been used to demonstrate a variety of III-V on silicon devices, including a 2.54 Tbit/s network on chip. A related approach is to epitaxially grow III-V quantum dot lasers on silicon, which has demonstrated submilliamp laser thresholds and improvement in laser lifetimes.
TuG2.3 -
Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser application
11:15-11:30
2017-10-03 11:15 2017-10-03 11:30 America/Denver Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser application The homogeneous broadening in Phosphorus doped Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter ΓHOM=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4. Hilton Santa Fe Historic Plaza Kahiki/Lily

    S. Srinivasan , Ghent University, Ghent, Belgium, C. Porret , imec, Heverlee, Belgium M. Pantouvaki , imec, Heverlee, Belgium Y. Shimura , Shizuoka University, Hamamatsu, Japan P. Geiregat , Ghent University, Ghent, Belgium R. Loo , imec, Heverlee, Belgium J. Van Campenhout , imec, Heverlee, Belgium D. Van Thourhout , Ghent University, Ghent, Belgium

    The homogeneous broadening in Phosphorus doped Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter ΓHOM=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4.
TuG2.4 -
Mid-infrared supercontinuum generation in high-contrast, fusion-bonded silicon membrane waveguides
11:30-11:45
2017-10-03 11:30 2017-10-03 11:45 America/Denver Mid-infrared supercontinuum generation in high-contrast, fusion-bonded silicon membrane waveguides Fusion-bonded suspended silicon waveguides with exemplary stability and geometrical design flexibility are fabricated at different sizes for nonlinear broadening in the mid-infrared. Pumping with a femtosecond laser source at ~4 µm, broadband supercontinuum spectra are observed from λ = 2–5 and 3–6 µm. Hilton Santa Fe Historic Plaza Kahiki/Lily

    J. Chiles , CREOL, UCF, Orlando, FL, United States, X. Gai , Laser Physics Centre, ANU, Canberra, Australia B. Luther-Davies , Laser Physics Centre, ANU, Canberra, Australia S. Fathpour , CREOL, UCF, Orlando, FL, United States

    Fusion-bonded suspended silicon waveguides with exemplary stability and geometrical design flexibility are fabricated at different sizes for nonlinear broadening in the mid-infrared. Pumping with a femtosecond laser source at ~4 µm, broadband supercontinuum spectra are observed from λ = 2–5 and 3–6 µm.