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WC1 - Long Wavelength Lasers and Integration Session Presider: Dieter Bimberg
8:30-10:00 Salon III
WC1.1 -
Monolithic III-V Laser Integration on Silicon Invited
08:30-09:00
2017-10-04 08:30 2017-10-04 09:00 America/Denver Monolithic III-V Laser Integration on Silicon TBD Hilton Santa Fe Historic Plaza Salon III

    J. Van Campenhout , IMEC

    TBD
WC1.2 -
III-V Lasers Epitaxially Grown on Si Invited
09:00-09:30
2017-10-04 09:00 2017-10-04 09:30 America/Denver III-V Lasers Epitaxially Grown on Si The laser source is still a key missing-component for full deployment of Si photonics. I will review the recent progress in the direct epitaxial growth of III-V lasers on Si substrates, from InAs/GaAs quantum dot to GaSb-based quantum well lasers. Hilton Santa Fe Historic Plaza Salon III

    E. TOURNIE , University of Montpellier, Montpellier, France

    The laser source is still a key missing-component for full deployment of Si photonics. I will review the recent progress in the direct epitaxial growth of III-V lasers on Si substrates, from InAs/GaAs quantum dot to GaSb-based quantum well lasers.
WC1.3 -
Low Threshold Epitaxial InAs Quantum Dot Lasers on On-Axis GaP/Si (001)
09:30-09:45
2017-10-04 09:30 2017-10-04 09:45 America/Denver Low Threshold Epitaxial InAs Quantum Dot Lasers on On-Axis GaP/Si (001) We report 1300 nm continuous wave lasing on an on-axis GaP/Si (001) virtual substrate operating up to 60°C with record low threshold current of 27 mA. Ridge and broad area lasers were fabricated with seven layers of p-modulation doped quantum dots and as-cleaved facets. Hilton Santa Fe Historic Plaza Salon III

    J. Norman , UC Santa Barbara, Santa Barbara, CA, United States, D. Jung , UC Santa Barbara, Santa Barbara, CA, United States M. Kennedy , UC Santa Barbara, Santa Barbara, CA, United States C. Shang , UC Santa Barbara, Santa Barbara, CA, United States A. Gossard , UC Santa Barbara, Santa Barbara, CA, United States J. Bowers , UC Santa Barbara, Santa Barbara, CA, United States

    We report 1300 nm continuous wave lasing on an on-axis GaP/Si (001) virtual substrate operating up to 60°C with record low threshold current of 27 mA. Ridge and broad area lasers were fabricated with seven layers of p-modulation doped quantum dots and as-cleaved facets.
WC1.4 -
Room Temperature Operation of InAs Quantum Dot lasers Formed by Diblock-Copolymer Lithography and Selective Area MOCVD Growth
09:45-10:00
2017-10-04 09:45 2017-10-04 10:00 America/Denver Room Temperature Operation of InAs Quantum Dot lasers Formed by Diblock-Copolymer Lithography and Selective Area MOCVD Growth Nanopattering and selective area MOCVD is utilized to realize wetting-layer-free InAs quantum dot laser diodes with an InGaAs QW carrier collection layer. The influence of the In0.1Ga0.9As QW on the device performance was evaluated at 80K and room temperature. Hilton Santa Fe Historic Plaza Salon III

    H. Kim , UW-Madison/ECE, Madison, WI, United States, W. Wei , UW-Madison/MSE, Madison, WI, United States T. Kuech , UW-Madison/CBE, Madison, WI, United States P. Gopalan , UW-Madison/MSE, Madison, WI, United States L. Mawst , UW-Madison/ECE, Madison, WI, United States

    Nanopattering and selective area MOCVD is utilized to realize wetting-layer-free InAs quantum dot laser diodes with an InGaAs QW carrier collection layer. The influence of the In0.1Ga0.9As QW on the device performance was evaluated at 80K and room temperature.