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TuD1 - GaSb- and GaN-based VCSELs Session Presider: James Lott
8:30-10:00 Salon VI
TuD1.1 -
Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 µm
08:30-08:45
2017-10-03 08:30 2017-10-03 08:45 America/Denver Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 µm GaSb-based electrically-pumped vertical-cavity surface-emitting lasers at 3.93µm, using type-II quantum wells are analyzed. Current broadening due to radial diffusion of carriers in the active region is estimated to be 4.2 µm and this is determined to be a major factor in limiting their performance. Hilton Santa Fe Historic Plaza Salon VI

    G. Veerabathran , Walter Schottky Institute, Garching , Germany, S. Sprengel , Walter Schottky Institute, Garching , Germany A. Andrejew , Walter Schottky Institute, Garching , Germany M. Amann , Walter Schottky Institute, Garching, Germany

    GaSb-based electrically-pumped vertical-cavity surface-emitting lasers at 3.93µm, using type-II quantum wells are analyzed. Current broadening due to radial diffusion of carriers in the active region is estimated to be 4.2 µm and this is determined to be a major factor in limiting their performance.
TuD1.2 -
High-Performance GaN-based VCSELs Invited
08:45-09:15
2017-10-03 08:45 2017-10-03 09:15 America/Denver High-Performance GaN-based VCSELs We have developed GaN-based VCSELs containing lattice-matched AlInN/GaN bottom DBRs, emitting 410 nm wavelength. A room temperature continuous wave operation with the threshold current of 6 mA was obtained, resulting in the maximum light output power of 4.2 mW. Hilton Santa Fe Historic Plaza Salon VI

    T. Takeuchi , Meijo University, Nagoya, Japan, S. Kamiyama , Meijo University, Nagoya, Japan M. Iwaya , Meijo University, Nagoya, Japan I. Akasaki , Meijo University, Nagoya, Japan

    We have developed GaN-based VCSELs containing lattice-matched AlInN/GaN bottom DBRs, emitting 410 nm wavelength. A room temperature continuous wave operation with the threshold current of 6 mA was obtained, resulting in the maximum light output power of 4.2 mW.
TuD1.3 -
Design Analysis of Subwavelength Grating Mirror for GaN Based VCSELs Structure
09:15-09:30
2017-10-03 09:15 2017-10-03 09:30 America/Denver Design Analysis of Subwavelength Grating Mirror for GaN Based VCSELs Structure A GaN subwavelength grating is designed that can exhibit ultrahigh reflectivity for blue spectral regime opening the door for implementation in GaN based VCSELs with practical reflector design. Hilton Santa Fe Historic Plaza Salon VI

    A. Slosberg , Lehigh University, Bethlehem, PA, United States, N. Tansu , Lehigh University, Bethlehem, PA, United States

    A GaN subwavelength grating is designed that can exhibit ultrahigh reflectivity for blue spectral regime opening the door for implementation in GaN based VCSELs with practical reflector design.
TuD1.4 -
Nonpolar GaN-Based Vertical Cavity Surface-Emitting Lasers Invited
09:30-10:00
2017-10-03 09:30 2017-10-03 10:00 America/Denver Nonpolar GaN-Based Vertical Cavity Surface-Emitting Lasers We demonstrate electrically injected III-nitride VCSELs with ion implanted apertures, tunnel junction intracavity contacts, and a dual dielectric DBR flip-chip design. Precise cavity length control has been achieved using photoelectrochemical band gap selective etching of InGaN/GaN multiple quantum wells. Hilton Santa Fe Historic Plaza Salon VI

    C. Forman , UCSB, Santa Barbara, CA, United States, S. Lee , UCSB, Santa Barbara, CA, United States E. Young , UCSB, Santa Barbara, CA, United States J. Leonard , UCSB, Santa Barbara, CA, United States D. Cohen , UCSB, Santa Barbara, CA, United States B. Yonkee , UCSB, Santa Barbara, CA, United States R. Farrell , UCSB, Santa Barbara, CA, United States T. Margalith , UCSB, Santa Barbara, CA, United States S. DenBaars , UCSB, Santa Barbara, CA, United States J. Speck , UCSB, Santa Barbara, CA, United States S. Nakamura , UCSB, Santa Barbara, CA, United States

    We demonstrate electrically injected III-nitride VCSELs with ion implanted apertures, tunnel junction intracavity contacts, and a dual dielectric DBR flip-chip design. Precise cavity length control has been achieved using photoelectrochemical band gap selective etching of InGaN/GaN multiple quantum wells.