TuD1.4 -
Nonpolar GaN-Based Vertical Cavity Surface-Emitting Lasers Invited
09:30-10:00
2017-10-03 09:30
2017-10-03 10:00
America/Denver
Nonpolar GaN-Based Vertical Cavity Surface-Emitting Lasers
We demonstrate electrically injected III-nitride VCSELs with ion implanted apertures, tunnel junction intracavity contacts, and a dual dielectric DBR flip-chip design. Precise cavity length control has been achieved using photoelectrochemical band gap selective etching of InGaN/GaN multiple quantum wells.
Hilton Santa Fe Historic Plaza Salon VI
C. Forman
, UCSB, Santa Barbara, CA, United States,
S. Lee
, UCSB, Santa Barbara, CA, United States
E. Young
, UCSB, Santa Barbara, CA, United States
J. Leonard
, UCSB, Santa Barbara, CA, United States
D. Cohen
, UCSB, Santa Barbara, CA, United States
B. Yonkee
, UCSB, Santa Barbara, CA, United States
R. Farrell
, UCSB, Santa Barbara, CA, United States
T. Margalith
, UCSB, Santa Barbara, CA, United States
S. DenBaars
, UCSB, Santa Barbara, CA, United States
J. Speck
, UCSB, Santa Barbara, CA, United States
S. Nakamura
, UCSB, Santa Barbara, CA, United States
We demonstrate electrically injected III-nitride VCSELs with ion implanted apertures, tunnel junction intracavity contacts, and a dual dielectric DBR flip-chip design. Precise cavity length control has been achieved using photoelectrochemical band gap selective etching of InGaN/GaN multiple quantum wells.