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WC2 - High Frequency Session Presider: Eric Tournie
10:30-12:00 Salon III
WC2.1 -
Passively mode-locked quantum-well laser with a saturable absorber having gradually varied bandgap Invited
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America/Denver Passively mode-locked quantum-well laser with a saturable absorber having gradually varied bandgap A novel passively mode-locked quantum-well laser, which saturable absorber (SA) has gradually varied bandgap, is fabricated. Light pulses are obtained at a repetition frequency of 226 GHz with a minimum pulse width of 605 fs under an appropriate mono current bias. Hilton Santa Fe Historic Plaza Salon III

    L. Song , Professor, Beijing, China, X. Junjie , Phd Student, Beijing, China

    A novel passively mode-locked quantum-well laser, which saturable absorber (SA) has gradually varied bandgap, is fabricated. Light pulses are obtained at a repetition frequency of 226 GHz with a minimum pulse width of 605 fs under an appropriate mono current bias.
WC2.2 -
Fixed-Point Frequencies Analysis of Monolithic 10 GHz Repetition Rates AlGaInAs Multiple Quantum-Well Laser Diodes
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America/Denver Fixed-Point Frequencies Analysis of Monolithic 10 GHz Repetition Rates AlGaInAs Multiple Quantum-Well Laser Diodes We report the first conducted measurements of the fixed-point frequencies on a 10 GHz repetition rate mode locked laser diode. The measurements show that four unique laser parameters can be modulated to independently control the combline offset frequency and comb spacing. Hilton Santa Fe Historic Plaza Salon III

    A. Zaman , University of Central Florida, Orlando, FL, United States, P. Delfyett , College of Optics and Photoinc, Orlando, FL, United States

    We report the first conducted measurements of the fixed-point frequencies on a 10 GHz repetition rate mode locked laser diode. The measurements show that four unique laser parameters can be modulated to independently control the combline offset frequency and comb spacing.
WC2.3 -
Limited validity range of the modulation current efficiency factor of directly modulated semiconductor lasers
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America/Denver Limited validity range of the modulation current efficiency factor of directly modulated semiconductor lasers The modulation current efficiency factor (MCEF) of a laser is assumed to be a constant quality parameter of directly modulated semiconductor lasers. Based on theoretical considerations and experiments this is shown to be incorrect. A definition of a realistic validity range of MCEF is introduced. Hilton Santa Fe Historic Plaza Salon III

    G. Larisch , TU-Berlin, Berlin, Germany, D. Bimberg , TU-Berlin, Berlin, Germany

    The modulation current efficiency factor (MCEF) of a laser is assumed to be a constant quality parameter of directly modulated semiconductor lasers. Based on theoretical considerations and experiments this is shown to be incorrect. A definition of a realistic validity range of MCEF is introduced.
WC2.4 -
Demonstration of Self-Pulsating InP-on-Si DFB Laser Diodes
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America/Denver Demonstration of Self-Pulsating InP-on-Si DFB Laser Diodes Self-pulsating InP-on-Si two-section DFB laser diodes are demonstrated. The lasers have stable controllable pulsation frequencies at 12.5, 25 and 40 GHz, RF spectral widths of around 40 MHz and 15 dB extinction ratio. Hilton Santa Fe Historic Plaza Salon III

    M. Shahin , Ghent University - imec, Ghent, Belgium, K. Ma , Zhejiang University, Hangzhou, China A. Abbasi , Ghent University - imec, Ghent, Belgium G. Roelkens , Ghent University - imec, Ghent, Belgium G. Morthier , Ghent University - imec, Ghent, Belgium

    Self-pulsating InP-on-Si two-section DFB laser diodes are demonstrated. The lasers have stable controllable pulsation frequencies at 12.5, 25 and 40 GHz, RF spectral widths of around 40 MHz and 15 dB extinction ratio.
WC2.5 -
Impact of Laser Dynamics on 56 Gbps PAM-4 Modulation of 25G Class, 1310 nm, Directly Modulated Lasers
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America/Denver Impact of Laser Dynamics on 56 Gbps PAM-4 Modulation of 25G Class, 1310 nm, Directly Modulated Lasers We investigate the effects of large signal dynamics and extinction ratio on the quality of 56 Gbps PAM-4 modulation with 1310 nm, 25G class directly modulated lasers. Hilton Santa Fe Historic Plaza Salon III

    P. Baveja , Applied Optoelectronics Inc. , Sugarland, TX, United States, M. Li , Applied Optoelectronics Inc. , Sugarland, TX, United States D. Wang , Applied Optoelectronics Inc. , Sugarland, TX, United States Y. Liang , Applied Optoelectronics Inc. , Sugarland, TX, United States Y. Chen , Applied Optoelectronics Inc. , Sugarland, TX, United States D. McIntosh-Dorsey , Applied Optoelectronics Inc. , Sugarland, TX, United States H. Zhang , Applied Optoelectronics Inc. , Sugarland, TX, United States J. Zheng , Applied Optoelectronics Inc. , Sugarland, TX, United States

    We investigate the effects of large signal dynamics and extinction ratio on the quality of 56 Gbps PAM-4 modulation with 1310 nm, 25G class directly modulated lasers.