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MB2 - Integrated Photodetector Systems Session Presider: Andrew Sarangan
10:30-12:00 Salon II
MB2.1 -
1.3um III-nitride Nanowire Monolithic Diode Lasers and Photonic Integrated Circuits on (001) Silicon Invited
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America/Denver 1.3um III-nitride Nanowire Monolithic Diode Lasers and Photonic Integrated Circuits on (001) Silicon We have realized monolithic InGaN/GaN disk-in-nanowire edge-emitting lasers on (001)Si with emission from 0.53 to 1.3um. Results on photonic integrated circuits consisting of 1.3um laser and detector and a passive dielectric waveguide in between will be presented. Hilton Santa Fe Historic Plaza Salon II

    P. Bhattacharya , University of Michigan, Ann Arbor, MI, United States, A. Hazari , University of Michigan, Ann Arbor, MI, United States

    We have realized monolithic InGaN/GaN disk-in-nanowire edge-emitting lasers on (001)Si with emission from 0.53 to 1.3um. Results on photonic integrated circuits consisting of 1.3um laser and detector and a passive dielectric waveguide in between will be presented.
MB2.2 -
Waveguide-Integrated High-Speed and High-Power Photodiode with >105 GHz Bandwidth
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America/Denver Waveguide-Integrated High-Speed and High-Power Photodiode with >105 GHz Bandwidth We demonstrate evanescently-coupled waveguide modified uni-traveling-carrier (MUTC) photodiodes with more than 105 GHz bandwidth. The photodiodes have dark currents as low as nA and deliver RF output powers of 5.1 dBm, 4.4 dBm and 3.5 dBm at 75 GHz, 80 GHz and 90GHz, respectively. Hilton Santa Fe Historic Plaza Salon II

    Q. Li , University of Virginia, Charlottesville, VA, United States, K. Sun , University of Virginia, Charlottesville, VA, United States K. Li , University of Virginia, Charlottesville, VA, United States Q. Yu , University of Virginia, Charlottesville, VA, United States J. Zang , University of Virginia, Charlottesville, VA, United States Z. Wang , University of Virginia, Charlottesville, VA, United States P. Runge , Fraunhofer Heinrich-Hertz-Ins, Berlin, Germany W. Ebert , Fraunhofer Heinrich-Hertz-Ins, Berlin, Germany A. Beling , University of Virginia, Charlottesville, VA, United States J. Campbell , University of Virginia, Charlottesville, VA, United States

    We demonstrate evanescently-coupled waveguide modified uni-traveling-carrier (MUTC) photodiodes with more than 105 GHz bandwidth. The photodiodes have dark currents as low as nA and deliver RF output powers of 5.1 dBm, 4.4 dBm and 3.5 dBm at 75 GHz, 80 GHz and 90GHz, respectively.
MB2.3 -
Si3N4 Photonic Integrated Circuit for Multi-baseline Interferometric Imaging
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America/Denver Si3N4 Photonic Integrated Circuit for Multi-baseline Interferometric Imaging We present design, fabrication and characterization of a compact photonic integrated circuit consisting of tri-layer Si3N4 platform including path-length-matching waveguides, multi-layer vertical couplers, arrayed waveguide gratings as demultiplexers, multimode interferometers and heater based phase tuner for long-baseline interferometric imaging. Hilton Santa Fe Historic Plaza Salon II

    G. Liu , student, Woodland, CA, United States

    We present design, fabrication and characterization of a compact photonic integrated circuit consisting of tri-layer Si3N4 platform including path-length-matching waveguides, multi-layer vertical couplers, arrayed waveguide gratings as demultiplexers, multimode interferometers and heater based phase tuner for long-baseline interferometric imaging.
MB2.4 -
Thermal Investigation of High-Power Photodiodes
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America/Denver Thermal Investigation of High-Power Photodiodes The performance of high power photodiodes flip-chip bonded on multi-crystal aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance of submount-Ti interfaces was measured and found to be the primary impedance to heat dissipation. Hilton Santa Fe Historic Plaza Salon II

    Y. Shen , Dr., Charlottesville, VA, United States, J. Gaskins , Dr., Charlottesville, VA, United States P. Hopkins , Associate Professor, Charlottesville, VA, United States J. Campbell , Lucien Carr III Professor, Charlottesville, VA, United States

    The performance of high power photodiodes flip-chip bonded on multi-crystal aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance of submount-Ti interfaces was measured and found to be the primary impedance to heat dissipation.
MB2.5 -
Nonplanar focal plane with silicon based photodetector
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America/Denver Nonplanar focal plane with silicon based photodetector A fabrication process is demonstrated to form curved image sensors based on CMOS image sensor technology. A stretchable polymer backplane is fabricated monolithically on the backside of the wafer before a DRIE etch is performed to segment the wafer and make the circuit stretchable. Hilton Santa Fe Historic Plaza Salon II

    Z. Ma , CREOL, UCF , Orlando, FL, United States, X. Wang , MSE,UCF, Orlando, FL, United States K. Rehshaw , CREOL, UCF , Orlando, FL, United States H. Cho , MAE,UCF, Orlando, FL, United States

    A fabrication process is demonstrated to form curved image sensors based on CMOS image sensor technology. A stretchable polymer backplane is fabricated monolithically on the backside of the wafer before a DRIE etch is performed to segment the wafer and make the circuit stretchable.