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Heterovalent II-VI and III-V Semiconductor Integration: A Platform for Solar Cell and Other Optoelectronic Device Applications Invited
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America/Denver
Heterovalent II-VI and III-V Semiconductor Integration: A Platform for Solar Cell and Other Optoelectronic Device Applications
A new material platform, II-VI (MgZnCdHg)(SeTe) and III-V (AlGaIn)(PAsSb) semiconductor materials lattice-matched to GaAs, GaSb, and InSb substrates, has been proposed to demonstrate monolithic integration of heterovalent structures for solar cells, midwave IR VCSEL, and the study of interfacial topological insulators.
Hilton Santa Fe Historic Plaza Salon VII
Y. Zhang
, Arizona State University, Tempe, AZ, United States
A new material platform, II-VI (MgZnCdHg)(SeTe) and III-V (AlGaIn)(PAsSb) semiconductor materials lattice-matched to GaAs, GaSb, and InSb substrates, has been proposed to demonstrate monolithic integration of heterovalent structures for solar cells, midwave IR VCSEL, and the study of interfacial topological insulators.