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WE1 - Type-II and Heterovalent Photodetectors Session Presider: Andreas Beling
8:30-9:45 Salon VII
WE1.1 -
Simulation of Molecular Beam Epitaxy Type II Infrared Superlattice Growth Invited
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America/Denver Simulation of Molecular Beam Epitaxy Type II Infrared Superlattice Growth The modeling of molecular beam epitaxial (MBE) growth has potential benefits in identifying optimal growth conditions and predicting atomic-scale defects that may form in actual growth. We describe the use of software to conduct realistic atomic-scale MBE growth simulations of Type II infrared superlattices. Hilton Santa Fe Historic Plaza Salon VII

    C. Grein , University of Illinois, Chicago, IL, United States

    The modeling of molecular beam epitaxial (MBE) growth has potential benefits in identifying optimal growth conditions and predicting atomic-scale defects that may form in actual growth. We describe the use of software to conduct realistic atomic-scale MBE growth simulations of Type II infrared superlattices.
WE1.2 -
High-Speed Type-II InGaAs/GaAsSb Multiple Quantum-Well Integrated Waveguide Photodiodes at 2 μm Wavelength
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America/Denver High-Speed Type-II InGaAs/GaAsSb Multiple Quantum-Well Integrated Waveguide Photodiodes at 2 μm Wavelength We present a high-speed InP-based photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2 μm detection. The fabricated photodiode exhibits dark current as low as 100nA at -2V, with an external responsivity of 0.27 A/W, and 3 dB bandwidth of 3.5 GHz at 2 μm. Hilton Santa Fe Historic Plaza Salon VII

    B. Tossoun , Author, Charlottesville, VA, United States, Y. Wang , Co-Author, Charlottesville, VA, United States S. Addamane , Co-author, Albuquerque, NM, United States G. Balakrishnan , Co-author, Albuquerque, NM, United States A. Holmes, Jr. , Co-author, Charlottesville, VA, United States A. Beling , Co-author, Charlottesville, VA, United States

    We present a high-speed InP-based photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2 μm detection. The fabricated photodiode exhibits dark current as low as 100nA at -2V, with an external responsivity of 0.27 A/W, and 3 dB bandwidth of 3.5 GHz at 2 μm.
WE1.3 -
Heterovalent II-VI and III-V Semiconductor Integration: A Platform for Solar Cell and Other Optoelectronic Device Applications Invited
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America/Denver Heterovalent II-VI and III-V Semiconductor Integration: A Platform for Solar Cell and Other Optoelectronic Device Applications A new material platform, II-VI (MgZnCdHg)(SeTe) and III-V (AlGaIn)(PAsSb) semiconductor materials lattice-matched to GaAs, GaSb, and InSb substrates, has been proposed to demonstrate monolithic integration of heterovalent structures for solar cells, midwave IR VCSEL, and the study of interfacial topological insulators. Hilton Santa Fe Historic Plaza Salon VII

    Y. Zhang , Arizona State University, Tempe, AZ, United States

    A new material platform, II-VI (MgZnCdHg)(SeTe) and III-V (AlGaIn)(PAsSb) semiconductor materials lattice-matched to GaAs, GaSb, and InSb substrates, has been proposed to demonstrate monolithic integration of heterovalent structures for solar cells, midwave IR VCSEL, and the study of interfacial topological insulators.