#getConfInfo.name#
MC2 - GaN Materials, LEDs and AMOLEDs Session Presider: Jian Xu
10:30-12:00 Salon III
MC2.1 -
Progress in GaN Substrates for Lighting and Beyond Invited
10:30-11:00
2017-10-02 10:30 2017-10-02 11:00 America/Denver Progress in GaN Substrates for Lighting and Beyond Significant advances in bulk GaN grown using the ammonothermal and Na-flux methods have led to improved purity, transparency, growth rates and boule diameters. In situ monitoring and analysis of the chemical composition of growth solutions is providing new insight and promises further improvements. Hilton Santa Fe Historic Plaza Salon III

    S. Pimputkar , Lehigh University, Bethlehem, PA, United States

    Significant advances in bulk GaN grown using the ammonothermal and Na-flux methods have led to improved purity, transparency, growth rates and boule diameters. In situ monitoring and analysis of the chemical composition of growth solutions is providing new insight and promises further improvements.
MC2.2 -
Multi-Color Nanowire LEDs on a Single Chip Invited
11:00-11:30
2017-10-02 11:00 2017-10-02 11:30 America/Denver Multi-Color Nanowire LEDs on a Single Chip We report on the monolithic integration of RGB InGaN dot-in-a-wire LEDs on a single chip. The correlated color temperature can be continuously varied in the range of 1900K to 6800K, while maintaining excellent color rendering index capability (CRI>90). Moreover, submicron scale RGB pixels were demonstrated. Hilton Santa Fe Historic Plaza Salon III

    Z. Mi , University of Michigan, Ann Arbor, MI, United States

    We report on the monolithic integration of RGB InGaN dot-in-a-wire LEDs on a single chip. The correlated color temperature can be continuously varied in the range of 1900K to 6800K, while maintaining excellent color rendering index capability (CRI>90). Moreover, submicron scale RGB pixels were demonstrated.
MC2.3 -
Dilute-Anion Boron Nitride Semiconductor for Light Emitters
11:30-11:45
2017-10-02 11:30 2017-10-02 11:45 America/Denver Dilute-Anion Boron Nitride Semiconductor for Light Emitters First-principle analysis of the band structures for dilute-anion BN-based semiconductor was performed, and the findings indicated a direct bandgap properties of this alloy in deep ultraviolet regime as compared to the indirect band gap BN alloy. Hilton Santa Fe Historic Plaza Salon III

    C. Tan , Clarkson University, Potsdam, NY, United States, D. Borovac , Lehigh University, Bethlehem, PA, United States W. Sun , Lehigh University, Bethlehem, PA, United States N. Tansu , Lehigh University, Bethlehem, PA, United States

    First-principle analysis of the band structures for dilute-anion BN-based semiconductor was performed, and the findings indicated a direct bandgap properties of this alloy in deep ultraviolet regime as compared to the indirect band gap BN alloy.
MC2.4 -
Applying Inverter Circuitry to the Driving Scheme of Active-Matrix Organic Light-Emitting Displays
11:45-12:00
2017-10-02 11:45 2017-10-02 12:00 America/Denver Applying Inverter Circuitry to the Driving Scheme of Active-Matrix Organic Light-Emitting Displays We applied the inverter circuitry to investigate the feasibility of reducing current surges occurred as organic light-emitting diode pixels undergo alternating-current driving scheme in active-matrix organic light-emitting display (AMOLED) and discovered that the current surge can decrease 3.64% by peak-to-peak comparison via SPICE simulation. Hilton Santa Fe Historic Plaza Salon III

    H. Yang , Taipei Tech, Taipei, Taiwan

    We applied the inverter circuitry to investigate the feasibility of reducing current surges occurred as organic light-emitting diode pixels undergo alternating-current driving scheme in active-matrix organic light-emitting display (AMOLED) and discovered that the current surge can decrease 3.64% by peak-to-peak comparison via SPICE simulation.