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MD1 - Integrated Optical Sources Session Presider: Shamsul Arafin
8:30-10:00 Salon VI
MD1.1 -
High Speed Light Sources for Optical Communication System Using Active Passive Integration Technology Invited
08:30-09:00
2017-10-02 08:30 2017-10-02 09:00 America/Denver High Speed Light Sources for Optical Communication System Using Active Passive Integration Technology Integration technology for optical communication devices has become important not only in realizing high performance devices but also from the view point of packaging. In this presentation, our approach to utilize integration technology for high speed light sources and passive alignment is reported. Hilton Santa Fe Historic Plaza Salon VI

    S. Tanaka , Oclaro Japan, Inc., Sagamihara, Japan

    Integration technology for optical communication devices has become important not only in realizing high performance devices but also from the view point of packaging. In this presentation, our approach to utilize integration technology for high speed light sources and passive alignment is reported.
MD1.2 -
Continuous Wave Integrated DBR Laser in an InP Membrane Platform
09:00-09:15
2017-10-02 09:00 2017-10-02 09:15 America/Denver Continuous Wave Integrated DBR Laser in an InP Membrane Platform We present the first demonstration of a continuous wave DBR laser for the Indium Phosphide Membrane On Silicon (IMOS) platform. Laser with 500 µm long cavity has a threshold current density of 2.5 kA/cm2 and total output power in a waveguide of 0.6 mW Hilton Santa Fe Historic Plaza Salon VI

    V. Pogoretskiy , TU/e, Eindhoven, Netherlands, Y. Jiao , TU/e, Eindhoven, Netherlands J. van der Tol , TU/e, Eindhoven, Netherlands M. Smit , TU/e, Eindhoven, Netherlands

    We present the first demonstration of a continuous wave DBR laser for the Indium Phosphide Membrane On Silicon (IMOS) platform. Laser with 500 µm long cavity has a threshold current density of 2.5 kA/cm2 and total output power in a waveguide of 0.6 mW
MD1.3 -
Self-Coupled Mode-Locked Laser with Switchable Repetition-Rate for mmW/THz Pulse Generation
09:15-09:30
2017-10-02 09:15 2017-10-02 09:30 America/Denver Self-Coupled Mode-Locked Laser with Switchable Repetition-Rate for mmW/THz Pulse Generation A monolithically integrated mode-locked laser cavity design with coupled feedback is proposed. It features switchable repetition rate. Optical frequency combs with mode spacing of 50 and 100 GHz are demonstrated. 350-GHz and 450-GHz pulse trains are shown through autocorrelation traces. Hilton Santa Fe Historic Plaza Salon VI

    M. Lo , Universidad Carlos III Madrid, Leganés, Spain, R. Guzmán , Universidad Carlos III Madrid, Leganés, Spain C. Gordón , Universidad Técnica de Ambato, Ambato, Ecuador M. Ali , Universidad Carlos III Madrid, Leganés, Spain G. Carpintero , Universidad Carlos III Madrid, Leganés, Spain

    A monolithically integrated mode-locked laser cavity design with coupled feedback is proposed. It features switchable repetition rate. Optical frequency combs with mode spacing of 50 and 100 GHz are demonstrated. 350-GHz and 450-GHz pulse trains are shown through autocorrelation traces.
MD1.4 -
Optimization of On-chip Colliding Pulse Mode-Locked Semiconductor Lasers
09:30-09:45
2017-10-02 09:30 2017-10-02 09:45 America/Denver Optimization of On-chip Colliding Pulse Mode-Locked Semiconductor Lasers We report the experimental optimization of the absorber length of the on-chip colliding pulse mode-locked semiconductor laser working at 50 GHz repetition rate. The fundamental approach is that the active-passive integration provides freedom to choose the desired gain section to saturable absorber length ratio optimized Hilton Santa Fe Historic Plaza Salon VI

    C. Gordon , Universidad Técnica de Ambato, Ambato, Ecuador, M. Cumbajin , Universidad Técnica de Ambato, Ambato, Ecuador G. Carpintero , Universidad Carlos III de Madr, Madrid, Leganés, Spain R. Guzman , Universidad Carlos III de Madr, Madrid, Leganés, Spain M. Lo , Universidad Carlos III de Madr, Madrid, Leganés, Spain

    We report the experimental optimization of the absorber length of the on-chip colliding pulse mode-locked semiconductor laser working at 50 GHz repetition rate. The fundamental approach is that the active-passive integration provides freedom to choose the desired gain section to saturable absorber length ratio optimized