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WD3 - Photonic Integrated Circuits Session Presider: Christian Koos
1:30-3:00 Salon VI
WD3.1 -
High Resolution Optical Frequency Domain Reflectometry for Measurement of Waveguide Group Refractive Index
01:30-01:45
2017-10-04 01:30 2017-10-04 01:45 America/Denver High Resolution Optical Frequency Domain Reflectometry for Measurement of Waveguide Group Refractive Index We present a high-resolution optical frequency domain reflectometry for characterization of group refractive index of waveguides in photonic integrated circuits. The method provides a relative accuracy of 10-4 for group refractive index measurements and of 10-3 for its dispersion. Hilton Santa Fe Historic Plaza Salon VI

    D. Zhao , Eindhoven University of Techno, Eindhoven, Netherlands, D. Pustakhod , Eindhoven University of Techno, Eindhoven, Netherlands K. Williams , Eindhoven University of Techno, Eindhoven, Netherlands X. Leijtens , Eindhoven University of Techno, Eindhoven, Netherlands

    We present a high-resolution optical frequency domain reflectometry for characterization of group refractive index of waveguides in photonic integrated circuits. The method provides a relative accuracy of 10-4 for group refractive index measurements and of 10-3 for its dispersion.
WD3.2 -
Enhancement of SOA-integrated EAM with low-temperature quantum well intermixing through supercritical fluid technique
01:45-02:00
2017-10-04 01:45 2017-10-04 02:00 America/Denver Enhancement of SOA-integrated EAM with low-temperature quantum well intermixing through supercritical fluid technique New scheme of quantum-well-intermixing (QWI) enhancement is proposed for SOA/EAM integration. Using supercritical-fluid, QWI can be performed at low temperature regime, leading to 10dB improvement in optical modulation. 13dB modulation, 17dB gain and >15GHz f-3dB were observed in 100μm long EAM, confirming simple integration scheme. Hilton Santa Fe Historic Plaza Salon VI

    Y. Chiu , NSYSU, Kaohsiung, Taiwan, Y. Chen , NSYSU, Kaohsiung, Taiwan

    New scheme of quantum-well-intermixing (QWI) enhancement is proposed for SOA/EAM integration. Using supercritical-fluid, QWI can be performed at low temperature regime, leading to 10dB improvement in optical modulation. 13dB modulation, 17dB gain and >15GHz f-3dB were observed in 100μm long EAM, confirming simple integration scheme.
WD3.3 -
Power-Efficient Kerr Frequency Comb Based Tunable Optical Source Invited
02:00-02:30
2017-10-04 02:00 2017-10-04 02:30 America/Denver Power-Efficient Kerr Frequency Comb Based Tunable Optical Source A power-efficient and highly-integrated photonic system, producing low phase-noise coherent optical signal with a wavelength range of 23 nm in the C-band, is presented. The system includes novel InP-photonic integrated coherent receiver circuits that consume record-low (approximately 184 mW) electrical power. Hilton Santa Fe Historic Plaza Salon VI

    S. Arafin , UCSB, Santa Barbara, CA, United States, A. Simsek , UCSB, Santa Barbara, CA, United States S. Kim , UCSB, Santa Barbara, CA, United States W. Liang , OEwaves Inc., Pasadena, CA, United States D. Eliyahu , OEwaves Inc., Pasadena, CA, United States G. Morrison , Freedom Photonics LLC, Santa Barbara, CA, United States M. Mashanovitch , UCSB, Santa Barbara, CA, United States A. Matsko , OEwaves Inc., Pasadena, CA, United States L. Johansson , Freedom Photonics LLC, Santa Barbara, CA, United States L. Maleki , OEwaves Inc., Pasadena, CA, United States M. Rodwell , UCSB, Santa Barbara, CA, United States L. Coldren , UCSB, Santa Barbara, CA, United States

    A power-efficient and highly-integrated photonic system, producing low phase-noise coherent optical signal with a wavelength range of 23 nm in the C-band, is presented. The system includes novel InP-photonic integrated coherent receiver circuits that consume record-low (approximately 184 mW) electrical power.
WD3.4 -
Fabrication of Dual Layer, Dual Width Waveguides for Dispersion Engineered InP Photonic Circuits
02:30-02:45
2017-10-04 02:30 2017-10-04 02:45 America/Denver Fabrication of Dual Layer, Dual Width Waveguides for Dispersion Engineered InP Photonic Circuits Dual layer, dual width waveguides exhibiting enhanced chromatic dispersion can enable photonic circuits for ultrafast optical pulses. With common tools and processes we here demonstrate the creation of the necessary waveguide geometry. 2.6 dB/cm shallow waveguide losses validate our process strategy. Hilton Santa Fe Historic Plaza Salon VI

    J. Kjellman , Eindhoven University of Techno, Eindhoven, Netherlands, R. Stabile , Eindhoven University of Techno, Eindhoven, Netherlands K. Williams , Eindhoven University of Techno, Eindhoven, Netherlands

    Dual layer, dual width waveguides exhibiting enhanced chromatic dispersion can enable photonic circuits for ultrafast optical pulses. With common tools and processes we here demonstrate the creation of the necessary waveguide geometry. 2.6 dB/cm shallow waveguide losses validate our process strategy.
WD3.5 -
Heterogeneous Integration of Thin-Film Lithium Niobate and Chalcogenide Waveguides on Silicon
02:45-03:00
2017-10-04 02:45 2017-10-04 03:00 America/Denver Heterogeneous Integration of Thin-Film Lithium Niobate and Chalcogenide Waveguides on Silicon A heterogeneous platform is demonstrated by integrating lithium niobate and chalcogenide glass waveguides on silicon with optical transition through low-loss mode-converting tapers. The method provides an efficient utilization of second- and third-order nonlinearities on the same chip for applications like stabilized octave-spanning optical combs. Hilton Santa Fe Historic Plaza Salon VI

    A. Honardoost , CREOL, UCF, Orlando, FL, United States, S. Khan , CREOL, UCF, Orlando, FL, United States G. Camacho Gonzalez , CREOL, UCF, Orlando, FL, United States J. Tremblay , EECS, UC Berkeley, Berkeley, CA, United States A. Yadav , CREOL, UCF, Orlando, FL, United States K. Richardson , CREOL, UCF, Orlando, FL, United States M. Wu , EECS, UC Berkeley, Berkeley, CA, United States S. Fathpour , CREOL, UCF, Orlando, FL, United States

    A heterogeneous platform is demonstrated by integrating lithium niobate and chalcogenide glass waveguides on silicon with optical transition through low-loss mode-converting tapers. The method provides an efficient utilization of second- and third-order nonlinearities on the same chip for applications like stabilized octave-spanning optical combs.