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MG1 - Nanoscale LEDs & Lasers Session Presider: Javier Aizpurua
8:30-10:00 Kahiki/Lily
MG1.1 -
Controlling surface recombination in a nanoscale III-V light emitting diode
08:30-08:45
2017-10-02 08:30 2017-10-02 08:45 America/Denver Controlling surface recombination in a nanoscale III-V light emitting diode We demonstrate low surface recombination velocity (~8700 cm/s) and reduction of non-radiative lifetime in an InP/InGaAs nanoscale light emitting diode using a sacrificial aluminum oxide layer. We predict high efficiency operation is possible after modest enhancement of spontaneous emission rate with an optical antenna. Hilton Santa Fe Historic Plaza Kahiki/Lily

    S. Fortuna , UC Berkeley, Berkeley, CA, United States, C. Heidelberger , MIT, Cambridge, MA, United States N. Andrade , UC Berkeley, Berkeley, CA, United States E. Yablonovitch , UC Berkeley, Berkeley, CA, United States M. Wu , UC Berkeley, Berkeley, CA, United States

    We demonstrate low surface recombination velocity (~8700 cm/s) and reduction of non-radiative lifetime in an InP/InGaAs nanoscale light emitting diode using a sacrificial aluminum oxide layer. We predict high efficiency operation is possible after modest enhancement of spontaneous emission rate with an optical antenna.
MG1.2 -
Cubic Phase Light Emitters Hetero-integrated on Silicon
08:45-09:00
2017-10-02 08:45 2017-10-02 09:00 America/Denver Cubic Phase Light Emitters Hetero-integrated on Silicon GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via co-integration on cheap and scalable CMOS-compatible Si(100) substrate. Hilton Santa Fe Historic Plaza Kahiki/Lily

    C. Bayram , University of Illinois, Urbana, IL, United States, C. Bayram , University of Illinois, Urbana, IL, United States

    GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via co-integration on cheap and scalable CMOS-compatible Si(100) substrate.
MG1.3 -
Parity-Time Symmetry Photonics Invited
09:00-09:30
2017-10-02 09:00 2017-10-02 09:30 America/Denver Parity-Time Symmetry Photonics TBD Hilton Santa Fe Historic Plaza Kahiki/Lily

    X. Zhang , UC Berkeley

    TBD
MG1.4 -
Spectral Response of an Active Photonic Cavity at the Poynting’s Threshold
09:30-09:45
2017-10-02 09:30 2017-10-02 09:45 America/Denver Spectral Response of an Active Photonic Cavity at the Poynting’s Threshold We establish a sub-lasing critical gain in a linear cavity at which Poynting’s vector vanishes at the cavity entrance. We show the cavity reflection spectrum becomes flat at this critical gain, and the device becomes indistinguishable from a perfect mirror – that nevertheless transmits light. Hilton Santa Fe Historic Plaza Kahiki/Lily

    A. Jahromi , University of Central Florida, Orlando, FL, United States, S. Shabahang , University of Central Florida, Orlando, FL, United States H. Kondakci , University of Central Florida, Orlando, FL, United States P. Melanen , Modulight Inc., Tampere, Finland S. Orsila , Modulight Inc., Tampere, Finland A. Abouraddy , University of Central Florida, Orlando, FL, United States

    We establish a sub-lasing critical gain in a linear cavity at which Poynting’s vector vanishes at the cavity entrance. We show the cavity reflection spectrum becomes flat at this critical gain, and the device becomes indistinguishable from a perfect mirror – that nevertheless transmits light.
MG1.5 -
A Novel Thin-film Blue Light Emitting Diode via GaN-on-Graphene Technology
09:45-10:00
2017-10-02 09:45 2017-10-02 10:00 America/Denver A Novel Thin-film Blue Light Emitting Diode via GaN-on-Graphene Technology Fully functional thin-film blue LED was fabricated by novel means of (1) performing epitaxial growth of a single crystalline InGaN/GaN heterostructure on a recycled graphene/SiC substrate (2) followed by release and transfer of the heterostructure. Hilton Santa Fe Historic Plaza Kahiki/Lily

    C. Bayram , University of Illinois, Urbana, IL, United States

    Fully functional thin-film blue LED was fabricated by novel means of (1) performing epitaxial growth of a single crystalline InGaN/GaN heterostructure on a recycled graphene/SiC substrate (2) followed by release and transfer of the heterostructure.