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MG2 - Plasmonics Session Presider: Andrei Faraon
10:30-12:00 Kahiki/Lily
MG2.1 -
Molecular optomechanics in atomic-scale plasmonic hot spots Invited
10:30-11:00
2017-10-02 10:30 2017-10-02 11:00 America/Denver Molecular optomechanics in atomic-scale plasmonic hot spots We introduce a Quantum Electrodynamics (QED) approach to describe inelastic scattering processes of molecules in atomic-scale plasmonic picocavities. By solving the corresponding optomechanical dynamics, we identify nonlinear inelastic signals related to vibrational pumping, together with dynamical backaction and strong correlations of the photons emitted. Hilton Santa Fe Historic Plaza Kahiki/Lily

    J. Aizpurua , Ctr. for Materials Physics CFM, San Sebastian, Spain, M. Schmidt , Ctr. for Materials Physics CFM, San Sebastian, Spain A. Gonzalez-Tudela , Max-Planck-Institute, Garching, Germany G. Giedke , Donostia Intl. Physics Ctr., San Sebastian, Spain T. Neuman , Ctr. for Materials Physics CFM, San Sebastian, Spain Y. Zhang , Donostia Intl. Physics Ctr., San Sebastian, Spain R. Esteban , Donostia Intl. Physics Ctr., San Sebastian, Spain

    We introduce a Quantum Electrodynamics (QED) approach to describe inelastic scattering processes of molecules in atomic-scale plasmonic picocavities. By solving the corresponding optomechanical dynamics, we identify nonlinear inelastic signals related to vibrational pumping, together with dynamical backaction and strong correlations of the photons emitted.
MG2.2 -
Design of Plasmonic Modulators with Vanadium Dioxide on Silicon-On-Insulator
11:00-11:15
2017-10-02 11:00 2017-10-02 11:15 America/Denver Design of Plasmonic Modulators with Vanadium Dioxide on Silicon-On-Insulator We propose a novel plasmonic modulator of only 200*150 nm modulating section within 3 μm footprint using Vanadium dioxide(VO2) as modulating material realised on SOI wafer, which can realise 600 nm wavelength range around optical communication wavelength 1.55 μm and high modulation depth 21.5dB/um. Hilton Santa Fe Historic Plaza Kahiki/Lily

    M. Sun , University of Melbourne, Melbourne, Australia

    We propose a novel plasmonic modulator of only 200*150 nm modulating section within 3 μm footprint using Vanadium dioxide(VO2) as modulating material realised on SOI wafer, which can realise 600 nm wavelength range around optical communication wavelength 1.55 μm and high modulation depth 21.5dB/um.
MG2.3 -
Geometry Dependence and Effects in Plasmonic Lattices
11:15-11:30
2017-10-02 11:15 2017-10-02 11:30 America/Denver Geometry Dependence and Effects in Plasmonic Lattices We investigate how the lattice geometry affects the collective modes supported by nanoplasmonic arrays. Experimental measurements show that arrays with different geometries have different dispersions which are also dependent on the polarization. We further study the possibility of observing topologically-nontrivial phenomenon in plasmonic system. Hilton Santa Fe Historic Plaza Kahiki/Lily

    R. Guo , Aalto University, Espoo, Finland

    We investigate how the lattice geometry affects the collective modes supported by nanoplasmonic arrays. Experimental measurements show that arrays with different geometries have different dispersions which are also dependent on the polarization. We further study the possibility of observing topologically-nontrivial phenomenon in plasmonic system.
MG2.4 -
ELECTRO-ABSORPTION PLASMONIC MODULATION IN LITHIUM NIOBATE
11:30-11:45
2017-10-02 11:30 2017-10-02 11:45 America/Denver ELECTRO-ABSORPTION PLASMONIC MODULATION IN LITHIUM NIOBATE Efficient electro-absorption modulator integrated with Ti diffused LiNbO3 waveguide consisting of stack of ITO/SiO2/Au and TiO2 film extended partially over the waveguide is presented. Simulation predicts insertion loss to be 0.04dB and extinction ratio to be 3.75dB for 20μm device under 2V switching voltage. Hilton Santa Fe Historic Plaza Kahiki/Lily

    J. Ali , Texas A&M University , Bryan, TX, United States, O. Eknoyan , Texas A&M University , College Station, TX, United States

    Efficient electro-absorption modulator integrated with Ti diffused LiNbO3 waveguide consisting of stack of ITO/SiO2/Au and TiO2 film extended partially over the waveguide is presented. Simulation predicts insertion loss to be 0.04dB and extinction ratio to be 3.75dB for 20μm device under 2V switching voltage.