MA3.1 -
Low-Dark Current III-V Photodiodes Grown on Silicon Substrate
01:30-01:45
2017-10-02 01:30
2017-10-02 01:45
America/Denver
Low-Dark Current III-V Photodiodes Grown on Silicon Substrate
InAlGaAs/InP p-i-n photodiodes epitaxially grown on silicon substrate with a dark current density as low as 1.3 mA/cm2 at -3 V are demonstrated. Responsivity, bandwidth, and output power at 1-dB compression are 0.76 A/W, 8 GHz, and -3.4 dBm, respectively.
Hilton Santa Fe Historic Plaza Salon I
K. Sun
, University of Virginia, Charlottesville, VA, United States,
D. Jung
, Univ. California Santa Barbara, Santa Barbara, CA, United States
J. Bowers
, Univ. California Santa Barbara, Santa Barbara, CA, United States
C. Shang
, Univ. California Santa Barbara, Santa Barbara, CA, United States
A. Liu
, Univ. California Santa Barbara, Santa Barbara, CA, United States
A. Beling
, University of Virginia, Charlottesville, VA, United States
InAlGaAs/InP p-i-n photodiodes epitaxially grown on silicon substrate with a dark current density as low as 1.3 mA/cm2 at -3 V are demonstrated. Responsivity, bandwidth, and output power at 1-dB compression are 0.76 A/W, 8 GHz, and -3.4 dBm, respectively.